Superlattice Effects and Limitations of Non-Destructive Measurement of Advanced Si/Si(1-x)Ge(x) Superlattice Structures Using Mueller Matrix Scatterometry (MMSE) and High-Resolution X-Ray Diffraction (XRD)

Ezra Pasikatan,George Andrew Antonelli,Nicholas Keller,Subhadeep Kal, Matthew Rednor,Kandabara Tapily,Dave Hetzer, Mark Schaefer, Markus Kuhn, Satoshi Murakami,Alain C. Diebold

JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3（2024）

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关键词

optical critical dimension,Mueller matrix spectroscopic ellipsometry,rigorous coupled wave analysis,gate-all-around nanowire transistor,three-dimensional DRAM,critical dimension metrology,X-ray diffraction,silicon/silicon-germanium superlattice,nanowire test structure,X-ray fluorescence

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