Partially Isolated Dual Work Function Gate IGZO TFT with Obviously Reduced Leakage Current for 3D DRAMs
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY（2024）
Key words
Logic gates,Thin film transistors,Three-dimensional displays,Metals,Fabrication,Transistors,Stacking,Dual work function gate,In-Ga-Zn-O (IGZO) thin-fifilm transistor (TFT),isolation dielectric,off-state current (I-off),partially isolated
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