A Comparative Study on the Effect of Dielectric Gate Materials on Analog and RF Performance of a Symmetrical Underlap DG Si/SiGe-based MOS-HEMT Device
2024 5th International Conference on Recent Trends in Computer Science and Technology (ICRTCST)（2024）
Key words
high-k dielectrics,High Electron Mobility Transistor (HEMT),Si/SiGe,Symmetrical Underlap,Frequency
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