1-Kv Β-Ga2o3umosfet with Quasi-Inversion Nitrogen-Ion-Implanted Channel
2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024（2024）
关键词
beta-Ga2O3,vertical MOSFET,UMOSFET,ion implantation,enhancement mode,power transistor
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