Gate Damage Mechanism of Schottky-Type P-Gan Gate HEMTs in Reverse Conduction Mode under Surge Current Stress
2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024（2024）
关键词
Schottky-type,p-GaN gate HEMTs,surge current,surge voltage,gate breakdown,donor trap generation
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