Exploring the Impact of Channel Thickness Scaling on PBTI and Low-Frequency Noise in Ultrathin IGZO Transistors
IEEE Transactions on Electron Devices（2024）
Key words
Field effect transistors,Performance evaluation,Electrons,Photonic band gap,Stress,Logic gates,Temperature measurement,High-k metal gate (HKMG),hydrogen,indium-gallium-zinc-oxide (IGZO),low-frequency noise (LFN),positive bias temperature instability (PBTI)
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