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Characterization of Composition Dependence of Properties of a MgNiO-based MSM Structure

Physica Scripta(2024)

Istanbul Univ

Cited 0|Views4
Abstract
In this study, the effect of Mg composition on structural and optical properties of MgxNi1-xO alloy thin film single crystal semiconductors as well as their implementation into Metal-Semiconductor-Metal (MSM) photodetector are studied. An 850 meV blue-shift of the bandgap is observed from 3.65 eV to 4.50 eV with increasing Mg composition from 0% to 67%. The deep ultraviolet/visible rejection ratio, which is the ratio of photosensitivity at a peak wavelength of 360 nm to that at 450 nm is found to be similar to 58 for Mg composition of 67%. Mg rich (%67 Mg) alloy-based photodetector is found to have two orders smaller dark current and have higher spectral response compared to NiO-based one. Spectral responsivities for MgxNi1-xO photodetectors are determined as 415 mA W-1, 80 mA W-1, and 5.6 mA W-1 for Mg compositions of 67%, 21%, and 0% (reference-NiO), respectively. Furthermore, the detectivity of the photodetectors enhances as Mg composition increases and the highest detectivity of a magnitude of similar to 1011 Jones is found for the photodetector with Mg composition of 67%.
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MSM,photodetector,MgNiO,metal-semiconductor-metal,UV,MBE,photoconductivity
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要点】:研究探讨了MgNiO基MSM结构材料的组成依赖性对结构和光学性质的影响,并发现67%Mg成分的合金制备的MSM光电探测器具有显著的性能提升和创新性。

方法】:通过改变Mg成分比例,研究MgxNi1-xO合金薄膜单晶半导体的结构和光学性质,并将其应用于金属-半导体-金属(MSM)光电探测器。

实验】:实验中,使用不同Mg成分比例的MgxNi1-xO合金薄膜,发现随着Mg成分从0%增加至67%,带隙从3.65 eV蓝移至4.50 eV,并且67%Mg成分的光电探测器具有较小的暗电流和较高的光谱响应。实验数据集名称未提及,但实验结果包括:67%Mg成分的探测器在360 nm和450 nm波长下的深紫外/可见抑制比约为58,光谱响应度为415 mA W^-1,最高检测率为10^11 Jones。