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Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics

Ardeshir Esteki,Sarah Riazimehr,Agata Piacentini,Harm Knoops, Bart Macco,Martin Otto, Gordon Rinke,Zhenxing Wang,Ke Ran,Joachim Mayer,Annika Grundmann,Holger Kalisch,Michael Heuken,Andrei Vescan,Daniel Neumaier,Alwin Daus,Max C. Lemme

arxiv（2024）

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