Optimized Trench IGBT with Dummy Gate and Buried N-Type CS Layer for Substantial Reduction of Power Loss and EMI Noise
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
关键词
Logic gates,Buried n-layer,common-mode (CM) noise,dummy gate (DG),electromagnetic interference (EMI) noise,gate-collector capacitance (C-GC),ON-state voltage drop (V (CEON)),reverse recovery dV (AK)/dt,trench insulated-gate bipolar transistor (TIGBT),turn-off loss (E-off),turn-on loss (E-on),trench insulated-gate bipolar transistor (TIGBT)
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