Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
Key words
Silicon carbide,Mathematical models,Interface states,Semiconductor device modeling,Threshold voltage,Logic gates,Electric potential,4H-silicon carbide (SiC),interface states,MOSFET,quasi-Fermi level,short channel effects (SCEs),source contact resistance
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