Electro-Thermal Simulation of GaN HEMT Based on a Scaling-Factor-Enhanced Time-Domain Spectral Element Solver

Chunyu Li,Tiancheng Zhang,Huaguang Bao,Aiqiang Cheng,Dunjun Chen,Chao-Fu Wang,Dazhi Ding,Douglas H. Werner

IEEE Transactions on Microwave Theory and Techniques（2024）

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关键词

Mathematical models,HEMTs,Couplings,Gallium nitride,Resistance heating,Finite element analysis,Electromagnetic heating,Electro-thermal coupling,gallium nitride high electron mobility transistors (GaN HEMTs),spectral element time-domain (SETD) method,time scaling factor

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