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Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel Via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer

Sijung Yoo,Donghoon Kim,Duk-Hyun Choe,Hyun Jae Lee,Yunseong Lee,Sanghyun Jo,Yoonsang Park,Ki Hong Kim, Kyooho Jung, Moonil Jung,Kwang-Hee Lee, Jee-Eun Yang,Sangwook Kim,Seung-Geol Nam

Symposium on VLSI Technology（2024）

Cited 0|Views6
Key words
Memory Window,Ferroelectric Field-effect Transistor,IGZO Channel,Open Voltage,Charge Depletion,Gate Stack,Sacrificial Layer,Channel Design
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