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Record Performance in GAA 2D NMOS and PMOS Using Monolayer MoS2 and WSe2 with Scaled Contact and Gate Length

W. Mortelmans, P. Buragohain,C. Rogan, A. Kitamura,C. J. Dorow,K. P. O'Brien,R. Ramamurthy, J. Lux, T. Zhong, S. Harlson, E. Gillispie, T. Wilson,Adedapo Oni,A. Penumatcha, M. S. Kavrik,K. Maxey, A. Kozhakhmetov,C. C. Lin, S. Lee, A. Vyatskikh,N. Arefin,P. Fischer, J. Kevek,T. Tronic,M. Metz,S. B. Clendenning,U. Avci

Symposium on VLSI Technology(2024)

Cited 0|Views9
Key words
2D CMOS,2D FET,2D,TMD,MoS2,WSe2
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