Backside Power Delivery with Relaxed Overlay for Backside Patterning Using Extreme Wafer Thinning and Molybdenum-filled Slit Nano Through Silicon Vias

P. Zhao,L. Witters,A. Jourdain,M. Stucchi,N. Jourdan,J. W. Maes, H. Bana,C. Zhu, R. Chukka,F. Sebaai,K. Vandersmissen,N. Heylen,D. Montero,S. Wang,K. D'have,F. Schleicher,J. De Vos,G. Beyer,A. Miller,E. Beyne

IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）

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Backside power delivery network (BSPDN),buried power rail (BPR),etch stop layer (ESL),etch stop layer (ESL),extreme wafer thinning,extreme wafer thinning,nano through silicon via (nTSV),nano through silicon via (nTSV),nano through silicon via (nTSV)

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