Monolithic Complementary Field Effect Transistors (CFET) Demonstrated Using Middle Dielectric Isolation and Stacked Contacts

Steven Demuynck,Victor Vega-Gonzalez,C. Toledo de Carvalho Cavalcante,L. Petersen Barbosa Lima, K. Stiers, C. Sheng,A. Vandooren,M. Hosseini, X. Zhou,Hans Mertens,Thomas Chiarella,Jürgen Bömmels,Roger Loo,E. Rosseel,Clement Porret,Y. Shimura, A. Akula,G. Mannaert,S. Choudhury,V. Brissonneau,E. Dupuy, T. Sarkar,Nathali Franchina-Vergel,A. Peter,Nicolas Jourdan,J. P. Soulie,Kevin Vandersmissen,F. Sebaai,P. Puttarame Gowda, K. Lai, A. Mingardi, S. Sumar Sarkar,K. D'Have,B. T. Chan, A. Sepulveda Marquez,R. Langer, I. Gyo Koo,E. Altamirano Sanchez,Katia Devriendt, P. Rincon Delgadillo,F. Lazzarino,Jérôme Mitard,J. Geypen,E. Grieten,D. Batuk, Y.-F. Chen, F. Verbeek,F. Holsteyns,S. Subramanian,N. Horiguchi,S. Biesemans

Symposium on VLSI Technology（2024）

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关键词

Field-effect Transistors,Drain Source,Top Channel,Nanosheets,Epitaxial,Multilayer Stack,Etching Step,Drying Step,Metal Work Function,Potential Asymmetry,Access Path

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