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Spatial Electroluminescence Distribution and Internal Quantum Efficiency in Substrate Free InAsSbP/InAsSb Double Heterostructure

B. A. Matveev,V. I. Ratushnyi,A. Yu. Rybal’chenko

Semiconductors（2024）

Cited 0|Views1
Key words
AIIIBV narrow gap heterostructures,mid-IR LEDs,current crowding in LEDs,InAsSb based LEDs,internal quantum efficiency in InAsSb based LEDs
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