Mechanisms of Current Fluctuation in High-Mobility P-Type Tellurium Field-Effect Transistors

Peng Yang,Yudong Pang,Jiajia Zha,Haoxin Huang,Zhendong Jiang,Meng Zhang,Chaoliang Tan,Wugang Liao

IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）

引用 1|浏览5

关键词

Field effect transistors,Dielectrics,Fluctuations,Logic gates,Silicon,Circuit stability,Tellurium,Dielectric layer,hexagonal boron nitride (h-BN),low-frequency noise (LFN),surface trap density,Te nanobelts field-effect transistor (FET)

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