Oxidizer Engineering of ALD for Efficient Production of ZrO2 Capacitors in DRAM
IEEE ELECTRON DEVICE LETTERS（2024）
关键词
Films,Capacitors,Tin,Random access memory,Voltage measurement,Leakage currents,High-k dielectric materials,DRAM,ZrO2,ultra-thin capacitor,k value,leakage current,oxidizer engineering
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