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Short-Channel Effect Suppression and Footprint Reduction in Double Gate-All-Around Field Effect Transistors and Inverters Based on Two-Dimensional Materials

ACS APPLIED ELECTRONIC MATERIALS(2024)

Cited 0|Views6
Key words
two-dimensional materials,double-gated nanotube gate-all-aroundfield effect transistor,double-channeled,short-channeleffects,leakage current,on-state current surging
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