Chrome Extension
WeChat Mini Program
Use on ChatGLM

Improving Single-Event Effect Performance of SiC MOSFET by Excess Hole Extraction

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY(2024)

Cited 0|Views2
Key words
SiC MOSFETs,single-event burnout (SEB),single event gate rupture (SEGR),reliability,on-resistance
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined