InP Optical Amplifiers with Euler U-bend Waveguide Geometry for Low-Loss Flip-Chip Hybrid Integration

Heidi Tuorila,Jukka Viheriälä,Lee Jae-Wung,Mikko Harjanne,Matteo Cherchi,Timo Aalto,Mircea Guina

arXiv · Applied Physics（2024）

Cited 0|Views8

Abstract

We report on the development of InP-based semiconductor amplifiers with a U-bend waveguide geometry having the input and output ports on one facet only. This waveguide geometry simplifies the chip alignment during the hybrid integration on silicon photonics platforms ultimately reducing the coupling losses, improving the integration yield, and minimizing the length of the optoelectronic chip. To achieve low loss U-bends with small footprint, we utilize the Euler bend geometry previously demonstrated on silicon and GaAs platforms. We analyze the gain properties of the devices by operating them as laser diodes at room temperature. Low loss U-bend performance with a 0.56 dB for a 50 μm effective bending radius bend in a single-mode strip InP waveguide is demonstrated. The interface between bend and straight waveguides was studied by comparing deep etched waveguides to a combination of shallow straight waveguides and deep etched bends. The effects of this interface on the device losses, electric properties and spectrum are reported. The implications related to having a bend section on the carrier injection and gain are discussed. Finally, results on the integration trials on silicon-on-insulator platform are presented.

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【要点】：本文提出了一种具有欧拉U型波导结构的InP光放大器，实现了低损耗的翻转芯片混合集成，提高了集成产率和减少了光电芯片长度。

【方法】：采用Euler U型弯曲波导几何结构，将输入和输出端口设计在单一面，以简化硅光子平台上混合集成时的芯片对准过程。

【实验】：通过将器件作为室温下的激光二极管来分析增益特性，实现了50 μm有效弯曲半径的单模InP波导中0.56 dB的低损耗U型弯曲性能。实验还对比研究了深蚀刻波导与浅蚀刻直波导和深蚀刻弯曲的组合之间的界面，并报道了该界面对器件损耗、电性能和频谱的影响。最后，展示了在硅上绝缘体平台上集成试验的结果。

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