Selective-Area Growth of Hexagonal-to-Cubic GaN As an N-Type Metal-Oxide-Semiconductor Field-Effect Transistor Drain on a Nanogrooved Si(100) Substrate

C. J. Cheng-Jun Huang, Shuo Hwai,Tsai-Fu Chung,Chien-Nan Hsiao, Hsin-Yi Tsai, Jing-Cheng Lin, Yu-Jin Hung, Bo-Cheng Lin, Shih-Meng Chen, Hung-Ching Tsai,Jason Woo,Edward Yi Chang,Mau-Chung Frank Chang

CRYSTAL GROWTH & DESIGN（2024）

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