GaAs PIN Diode Based 220 GHz Switch Design Using Flip Chip Technique
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY（2025）
关键词
PIN photodiodes,Switches,Gallium arsenide,Capacitance,Switching circuits,Circuits,Scattering parameters,Resistance,Pins,Insertion loss,Equivalent circuit model,GaAs PIN diode,parameter extraction,subterahertz switch
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