Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs

Hao Yu,Sachin Yadav,Barry O'Sullivan, Tzu-Heng Lin,Aarti Rathi,Alireza Alian,Tian-Li Wu,Rana Elkashlan,Sourish Banerjee,Uthayasankaran Peralagu,Bertrand Parvais,Nadine Collaert

IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）

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MODFETs,HEMTs,Logic gates,Stress,Wide band gap semiconductors,Metals,Electrons,Aluminum gallium nitride,Radio frequency,Potential energy,Co-deposited TiSi,contact resistivity,highly doped silicon,oxygen-gettering metal,titanium alloys

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