Characterizations and Framework Modeling of Bulk MOSFET Threshold Voltage Based on a Physical Charge-Based Model Down to 4 K

Hao Su, Yunfeng Xie, Yuhuan Lin, Haihan Wu, Wenxin Li, Zhizhao Ma, Yiyuan Cai, Xu Si, Shenghua Zhou,Guangchong Hu,Yu He,Feichi Zhou,Xiaoguang Liu,Longyang Lin,Yida Li,Hongyu Yu,Kai Chen

2024 50TH IEEE EUROPEAN SOLID-STATE ELECTRONICS RESEARCH CONFERENCE, ESSERC 2024（2024）

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关键词

cryo-CMOS,MOSFET,threshold voltage,short channel effect,narrow width effect,DIBL,body effect

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