AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY（2024）
关键词
Gain,Wide band gap semiconductors,Logic gates,Aluminum gallium nitride,Threshold voltage,Performance evaluation,MODFETs,HEMTs,Voltage measurement,Plasma temperature,Amplifier,monolithic integration GaN-on-Si circuits,metal-insulator-semiconductor high-electron-mobility transistors,high-temperature
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