Edge-Field-Suppression for Improved Breakdown and Leakage in Vertical $\beta$ -Ga $_{\text{2}}$ O $_{\text{3}}$ Schottky Barrier Diode Through Trench Field Limiting Rings
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
Key words
Electric fields,Schottky diodes,Films,Performance evaluation,Gallium,Etching,Periodic structures,Image edge detection,Heterojunctions,Electric breakdown,Field limiting ring (FLR),gallium oxide (Ga2O3),trench
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