Total Ionizing Dose Effects on DC/RF Performances of Emerging Vertical Back-Gate CMOS Platform
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY（2024）
关键词
MOSFET,Radio frequency,Logic gates,Mathematical models,Silicon,Semiconductor device modeling,Resistance,Metals,Lithography,Performance evaluation,High integration-density inverter,radio frequency (RF),technology computer aided design (TCAD),total ionizing dose (TID),vertical back-gate complementary metal-oxide-semiconductor (VBG CMOS)
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