Performance Limitations of GaN HEMTs with Quaternary InAlGaN and ScAlGaN Barrier Layers
BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium（2024）
关键词
Radiofrequency integrated circuits,power semiconductor devices,quantum well devices,gallium nitride,high electron mobility transistors,heterojunctions,two-dimensional electron gas,semiconductor device modeling,charge carrier mobility
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