Improved Wavelength Stability of InGaN Based Red LEDs Grown on Graphene/SiC Substrates
IEEE ELECTRON DEVICE LETTERS（2025）
Key words
Silicon carbide,Light emitting diodes,Stability analysis,Epitaxial growth,Nitrogen,Current density,Substrates,Stress,InGaN,red light-emitting diodes,wavelength stability,graphene,graphene
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