Design and Process Analysis of a Split-Gate Trench Power MOSFET with Bottom-Trench High-k Pillar Superjunction for Enhanced Performance

Yunteng Jiang, Zhentao Xiao, Zonghao Zhang, Juncheng Zhang, Chenxing Wang, Wenjun Li,Haimeng Huang,Aynul Islam,Hongqiang Yang

arxiv（2025）

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Key words

Breakdown Voltage,Figure of Merit,High-k Materials,Power Density,Specific On-resistance,SGT-MOSFET,Superjunction,Switching Time,TCAD

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