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Atomic-Scale Dynamic Mechanisms of Embedded MoS2 Wires

ACS NANO(2024)

Gyeongsang Natl Univ | Oak Ridge Natl Lab | Univ Texas Austin

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Abstract
Nanowires composed of a 1:1 stoichiometry of transition metals and chalcogen ions can be fabricated from two-dimensional transition metal dichalcogenides (TMDs) by using electron beam irradiation. Wires fabricated through in situ experiments can be geometrically connected to TMD sheets in various ways, and their physical properties can vary accordingly. Understanding the structural transformation caused by electron beams is critical for designing wire-sheet structures for nanoelectronics. In this study, we report the behavior of nanowires formed inside a monolayer MoS2 sheet by combining phase-contrast images and large-scale atomistic modeling. We investigate the effect of vacancies on the dynamic evolution of wires, such as rotations with different edge structures and breaking, by considering the interactions between MoS wires and MoS2 nanosheets. The obtained insights can be applied to other monolayer TMDs to guide the behavior of TMD wires and fabricate favorable geometries for various applications.
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MoS wire,MoS2 nanosheets,vacancy,TEM,DFT,Molecular Dynamics
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要点】:本文研究了嵌入在单层MoS2薄膜中的MoS2纳米线的原子级动态机制,揭示了电子束辐照导致的结构变化,为纳米电子学中导线-薄膜结构的设计提供了理解基础。

方法】:通过结合相衬图像和大规模原子级建模分析了纳米线的动态演化行为。

实验】:在实验中,通过原位实验制造了纳米线,并利用电子束辐照研究了其动态机制,具体数据集名称未在摘要中提及,但研究结果是通过对MoS2纳米线的行为分析获得的。