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Effect of Substrate Misorientation Angle on the Structural Properties of N-polar GaN Grown by Hot-Wall MOCVD on 4H-Sic(0001̄)

Hengfang Zhang,Jr.-Tai Chen,Alexis Papamichail,Ingemar Persson,Dat Q. Tran,Plamen P. Paskov,Vanya Darakchieva

Journal of Crystal Growth（2024）

Cited 0|Views5
Key words
N-polar GaN,epitaxial growth,SiC substrate misorientation angle,Multi-step temperature growth,MOCVD
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