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    • Advancing High-Performance Memristors Enabled by Position-Controlled Grain Boundaries in Controllably Grown Star-Shaped MoS2.

    Shangui Lan,Fangyuan Zheng,Changchun Ding, Yukun Hong,Baoyu Wang,Chenyang Li, Shuqing Li, Hong Yang,Zhili Hu,Baojun Pan,Jian Chai, Yinan Wang, Guiqing Huang, Min Yue,Shun Wang,Lain-Jong Li,Lijie Zhang,Peijian Wang

    Nano Letters（2024）SCI 1区SCI 2区

    Univ Hong Kong | Xihua Univ | Zhejiang Univ

    Cited 2|Views6
    Abstract
    Two-dimensional transition metal dichalcogenides are highly promising platforms for memristive switching devices that seamlessly integrate computation and memory. Grain boundaries (GBs), an important micro-nanoscale structure, hold tremendous potential in memristors, but their role remains unclear due to their random distribution, which hinders fabrication. Herein, we present a novel chemical vapor deposition approach to synthesize star-shaped MoS2 nanoflakes with precisely positioned GBs. This approach enables memristor fabrication at specific locations and notably reduces the average set voltage (16-fold reduction) compared to single-crystalline MoS2, due to reduced diffusion barriers for metallic ions through GBs, as further validated by theoretical calculations. These findings offer a new method for synthesizing TMDs with controlled GBs for memristor fabrication, highlighting the crucial role of GBs in reducing set voltage and power consumption, advancing memristive switching devices toward applications in integrated computation and memory systems.
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    Key words
    transition metal dichalcogenides (TMDs),chemical vapordeposition (CVD),controllable synthesis strategy,grain boundaries (GBs),memristors
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    【要点】：本文提出了一种通过精确控制晶界位置生长星形MoS2纳米片的化学气相沉积方法，实现了高性能 memristor 的制备，显著降低了平均置位电压，为二维过渡金属二硫属化合物在集成计算和存储系统中的应用提供了新途径。
    

    【方法】：作者利用化学气相沉积方法合成了具有精确位置晶界的星形MoS2纳米片。
    

    【实验】：实验中使用了所合成的星形MoS2纳米片，通过特定的晶界位置实现了 memristor 的制备，实验结果表明，与单晶MoS2相比，平均置位电压降低了16倍，这一结果得到了理论计算的支持。数据集名称未在摘要中提及。