Analysis of Back-Gate Bias Control on EVM Measurements of a Dual-Band Power Amplifier in 22 Nm FD-SOI for 5G 28 and 39 GHz Applications

Lucas Nyssens,M. Nabet,M. Rack, Y. Bendou,S. Wane, J. B. Sombrin,J. -p. Raskin,D. Lederer

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS（2024）

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关键词

Field effect transistors,Impedance,5G mobile communication,Bandwidth,Power generation,Logic gates,Transistors,Power amplifiers,Threshold voltage,Radio frequency,Power amplifier,millimeter-wave,FD-SOI,UTBB,dual-band,wideband,5G,back-gate bias control,EVM measurement

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