Normally-Off High-Performance Diamond FET with Large $\textit{v}_{\text{th}}$ and Low Leakage Current
IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）
关键词
Logic gates,Leakage currents,Field effect transistors,Diamond,Threshold voltage,Two dimensional hole gas,Etching,Transconductance,Performance evaluation,Gate leakage,Gd2O3/Gd,Diamond field-effect transistor (FET),large threshold voltage,low leakage current,low work function,normally-off,normally-off
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