High-Yield Enhancement-Mode GaN P-Fet with Etching-Target Layer and High-Selectivity Etching Techniques

Xuanming Zhang,Yuanlei Zhang,Jiachen Duan, Zhiwei Sun,Weisheng Wang,Ye Liang,Xuelin Yang,Lisheng Zhang,Zhenghao Chen, Jie Zhang,Kain Lu Low,Wen Liu

IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）

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关键词

Etching,Logic gates,Epitaxial growth,Surface roughness,Rough surfaces,Fluctuations,Fabrication,MOCVD,Electrons,Benchmark testing,AlGaN,high-selectivity etching,p-channel heterojunction field-effect transistor (p-FET),p-GaN

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