Investigation on Design Approaches for 4H-Sic Bi-Directional Field Effect Transistors (Bidfets)
2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)（2024）
关键词
4H-Silicon Carbide,Bi-Directional FET,Design Approach,Common Drain,Monolithically Integrated,Channel Stop,Area Savings
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