Atomic-Layer-Deposited Al2O3 Layer Inserted in SiO2/HfO2 Gate-Stack-Induced Positive Flat-Band Shift with Dual Interface Dipoles for Advanced Logic Device
ACS APPLIED NANO MATERIALS（2024）
关键词
in situ TALD,Al2O3 dipole layer,multithreshold voltages modulation,valence band offset(VBO),interface dipole engineering (IDE)
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