Topological Polarization Dynamics and Domain-Wall Tunneling Electroresistance Effects in Cylindrical-Shell Ferroelectrics
IEEE ELECTRON DEVICE LETTERS（2025）
关键词
Iron,Tunneling,Metals,Films,Switches,Hafnium oxide,Electrodes,Voltage,Three-dimensional displays,Nonvolatile memory,Ferroelectric,hafnium oxide,cylindrical shell structure,topological polarization,phase-field simulation
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