Epitaxial Si/SiGe Multi-Stacks: from Stacked Nano-Sheet to Fork-Sheet and CFET Devices

R. Loo, A. Akula, Y. Shimura,C. Porret,E. Rosseel, T. Dursap,A. Y. Hikavyy, M. Beggiato,J. Bogdanowicz, A. Merkulov,M. Ayyad, H. Han,O. Richard, A. Impagnatiello, D. Wang,K. Yamamoto, T. Sipocz, A. Kerekes,H. Mertens, N. Horiguchi,R. Langer

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY（2025）

引用 0|浏览2

关键词

microelectronics - semiconductor materials,complementary FET,chemical vapor deposition,Si/SiGe multi-stacks,physical properties of electronic materials

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要