Modeling of Conduction Mechanism in Filament-Free Multilayer Bulk RRAM
IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）
关键词
Switches,Tunneling,Temperature measurement,Nonhomogeneous media,Resistance,High-voltage techniques,Fitting,Computational modeling,Programming,Transmission electron microscopy,Bulk resistive-switching random access memory (RRAM),compute in memory,conduction mechanism,filament-free switching,neuromorphic computing,TiOx
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