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Impact Ionization in LDMOS Transistors: Improved Compact Model and Asymmetry under Forward and Reverse Modes of Operation

Yawar Hayat Zarkob,Dinesh Rajasekharan,Ahtisham Pampori,Ayushi Sharma,Girish Pahwa,Debashish Nandi,Chetan Kumar Dabhi, Volker Kubrak, Bob Peddenpohl, Mingchun Tang,Chenming Hu,Yogesh Singh Chauhan

IEEE Journal of the Electron Devices Society（2025）

Cited 0|Views2
Key words
BSIM-BULK,High Voltage,Compact Modeling,LDMOS,drift region,reverse mode,impact ionization,Verilog-A
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