Statistical Study of Large-Area Schottky Barrier Diodes Fabricated on 2-in Β-Ga2o3 Wafer Using Au-Free Processes
IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）
Key words
Schottky diodes,Resistance,Fabrication,Ion implantation,Epitaxial layers,Nitrogen,Substrates,Statistical distributions,Schottky barriers,Performance evaluation,Gallium oxide Ga2O3,high breakdown voltage (BV),high current,industrial,statistical,wafer
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