Performance Optimization of Fabricated Nanosheet GAA CMOS Transistors and 6T-SRAM Cells Via Source/Drain Doping Engineering

Xuexiang Zhang, Qingkun Li, Lei Cao,Qingzhu Zhang, Renjie Jiang, Peng Wang, Jiaxin Yao,Huaxiang Yin

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY（2025）

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关键词

Optimization,Gallium arsenide,Logic gates,MOS devices,Transistors,Silicon,Silicon germanium,Performance evaluation,Implants,Doping profiles,Gate-all-around nanosheet transistor (GAA NSFET),source/drain (S/D) doping,spacer,lightly doped drain (LDD),6T static random-access memory (6T-SRAM)

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