Substrate Temperature-Induced Grain Boundary Reduction for High-Efficiency Self-Powered N-V2o5/p-si Photovoltaic Heterojunction Devices

Jamal Kazmi,Zamir-ul-Hassan,Waqas Ahmad,Syed Raza Ali Raza,Jafar Hussain Shah,Aziz Khan, Muhammad Ashhad Shahid,Mojtaba Dayer,Muhammad Anwar-ul-Haq,Abdul Jalil,Mohd Ambri Mohamed,Federico Rosei,Zhiming Wang

JOURNAL OF ALLOYS AND COMPOUNDS（2025）

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Key words

n-vox/p-si heterojunction,Self-powered photovoltaic devices,Substrate temperature control,Grain boundary scattering,Metal-semiconductor interface,Mott insulators,Type-II heterojunctions

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