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Technology-Dependent Capacity Analysis for 6G RF Front Ends with D-Band Implementation Using 22-Nm CMOS SOI

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES(2025)

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Key words
Mixers,OFDM,Radio frequency,6G mobile communication,Switches,Integrated circuit modeling,Noise figure,Silicon-on-insulator,Power amplifiers,Gain,CMOS silicon on insulator (SOI),LNA,millimeter-wave,phased array,power amplifier (PA),RF front end (FE),6G,switch,time-division duplexing (TDD)
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