Effect of AlGaN Thickness Variation on the Analog Performance of a Normally-Off AlGaN/GaN Based Double Gate MOS-HEMT Device
2024 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)（2024）
Key words
GaN/AlGaN heterojunction,Double Gate (DG),MOS-HEMT,AlGaN layer,normally-off,Analog
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