Aging Analysis and Anti-Aging Circuit Design of Strong-Arm Latch Circuits in 14 Nm FinFET Technology

Xin Xu, Meng Li, Yiqun Shi, Yunpeng Li,Hao Zhu,Qingqing Sun

Electronics（2025）

Cited 0|Views8

Abstract

Despite the advantages of fin field-effect transistors (FinFETs), there are hidden issues such as electric field enhancement and exacerbated self-heating effects, which will intensify device aging effects. Due to the escalating costs associated with aging protection at the device process level, there is an urgent need to reduce the impact of aging on circuit performance from the circuit design perspective. This study focuses on the specific structure of the strong-arm latch comparator and conducts a detailed aging analysis. Based on the quasi-static approximation (QSA) model, the threshold voltage shift under operational stress is simulated. It is concluded that both the hot carrier injection (HCI) effect and negative bias temperature instability (NBTI) effect play equally non-negligible roles. Furthermore, aging tests were conducted based on 14 nm FinFET devices, validating the substantial HCI effects induced by short-duration pulses. Simultaneously, the test results suggest that the aging effect becomes more remarkable with increasing current. An improved circuit is proposed to reduce the HCI effect by reducing the current pulse by the way of pre-charging, which effectively reduces the threshold voltage shift of the latch comparator input transistors.

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Key words

strong-arm latch,FinFET,hot carrier degradation,negative bias temperature instability,anti-aging design

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【要点】：本文针对14纳米FinFET技术下强臂锁存比较器的老化效应进行了详细分析，并提出了一种降低热载流子注入（HCI）效应的改进电路设计。

【方法】：研究采用准静态近似（QSA）模型模拟了操作应力下的阈值电压偏移，分析了热载流子注入（HCI）效应和负偏压温度不稳定性（NBTI）效应的影响。

【实验】：基于14纳米FinFET设备进行了老化测试，测试结果验证了短时脉冲引发的大量HCI效应，并发现随着电流增加，老化效应更加显著。提出的改进电路通过预充电方式降低电流脉冲，有效减少了锁存比较器输入晶体管的阈值电压偏移。