ISO-Performance N-Type and P-Type MOSFETs on Densely Aligned CNT Array Enabled by Self-Aligned Extension Doping with Barrier Booster

Shengman Li,Donglai Zhong,Carlo Gilardi,Nathaniel Safron,Tzu-Ang Chao,Gilad Zeevi, Samantha Van Rijs, Andrew Denis Bechdolt,Matthias Passlack,Gregory Pitner,Iuliana Radu,H.-S. Philip Wong,Subhasish Mitra

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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关键词

Carbon Nanotubes,N-type MOSFET,Aligned Carbon Nanotube Arrays,Carrier Mobility,High Carrier Mobility,Metal Doping,Impedance,Charge Density,Process Flow,Electron Beam Lithography,Resistant Parasites,Schottky Barrier,Etching Time,Low-dimensional Materials,Minimal Leakage

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